Electronics

The key difference between silicon and germanium diodes is that silicon diodes have a higher threshold voltage (approximately 0.7 volts) and superior thermal stability, whereas

The main difference between BJT and FET is that BJT is a current-controlled device, while FET is a voltage-controlled device. Before understanding the difference between

Silicon is a semiconductor material with a unique characteristic – it has a number of free electrons that is less than a conductor but more

The forbidden energy gap or band gap of silicon is 1.12 eV at room temperature..Silicon (Si) is one of the most widely used semiconductor materials

The forbidden energy gap or band gap of germanium is 0.72 eV at room temperature. In semiconductor physics, the Forbidden Energy Gap, commonly referred to

Explore the concept of diffusion capacitance in diodes, a crucial factor affecting their performance in high-frequency applications. Learn how this capacitance forms due to charge

Definition: Thermal voltage is the voltage generated within a semiconductor junction due to temperature variation. The voltage is generated in a semiconductor material due to